SMD Type
MOS Field Effect Transistor 2SJ602
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features...
SMD Type
MOS Field Effect
Transistor 2SJ602
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low on-resistance RDS(on)1 = 73 m RDS(on)2 = 107m MAX. (VGS =-10 V, ID = -10 A)
Low Ciss: Ciss = 1300 pF TYP. Built-in gate protection diode
+0.2 5.28-0.2
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
MAX. (VGS = -4.0 V, ID =-10 A)
+0.2 8.7-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD PD Tch Tstg Rating -60 20 20 50 40 1.5 150 -55 to +150 Unit V V A A W W
5.60
1 Gate 2 Drain 3 Source
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Free Datasheet http://www.datasheet4u.co
SMD Type
2SJ602
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 20V,VDS=0 -1.5 8 -2.0 16 59 75 Min Typ
MOSFET
Max -10 10 -2.5
Unit A A V S
VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss...