DatasheetsPDF.com
2SJ600
MOSFET
Description
SMD Type MOS Field Effect
Transistor
2SJ600 Features Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 Built-in gate protection diode...
Kexin
Download 2SJ600 Datasheet
Similar Datasheet
2SJ600
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
- NEC
2SJ600
MOSFET
- Kexin
2SJ601
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
- NEC
2SJ601
MOSFET
- Kexin
2SJ602
MOS FIELD EFFECT TRANSISTOR
- NEC
2SJ602
MOSFET
- Kexin
2SJ603
MOS FIELD EFFECT TRANSISTOR
- NEC
2SJ604
P-Channel Power MOSFET
- NEC
2SJ604
MOSFET
- Kexin
2SJ605
MOS FIELD EFFECT TRANSISTOR
- NEC
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)