HLB123D

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No. : 1/5 HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features High Speed Switching Low Saturation Voltage High Reliability TO-126ML Absolute Maximum Ratings (TA=25°C) Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 30 W Maximum Voltages and Currents BVCBO Collector to Base V...