(LT1x82A) Chip LED Device
Chip LED Device
LT1t82A series
LT1t82A series
s Outline Dimensions
(Unit : mm)
3.3!2.9mm, 1.1mm Thickness, High-lumin...
Description
Chip LED Device
LT1t82A series
LT1t82A series
s Outline Dimensions
(Unit : mm)
3.3!2.9mm, 1.1mm Thickness, High-luminosity Chip LED Devices with Lens
s Radiation Diagram
(Ta=25˚C)
3.3
Colorless transparency
-40˚
-30˚
-20˚
-10˚
0˚ 100 +10˚
+20˚
+30˚ +40˚
80 -50˚
Relative luminous intensity(%)
0.85 0.95
2.9 1.9 0.4 0.4
0.4
+50˚ 60
1
2
0.6
2.9
-60˚
+60˚ 40 +70˚ 20 +80˚
-70˚
(4-R0.2) 0.9
+0.1 0.16-0.06
(R0.55) 1.5 0.9
-80˚
(R0.2)
-90˚ 0
+0.2 1.1-0.1
+90˚
(0.3)
(0.3) (0.3)
(0.3)
0to0.15 0.3
0.8
Pin connections 1 Anode 2 Cathode Unspecified tolerance:±0.2
U,T type:Polarity faces in the opposite direction.
s Absolute Maximum Ratings
Model No. Radiation color Radiation material Power dissipation Forward current Peak forward current P IF IFM*1 (mW) (mA) (mA)
(Ta=25˚C) Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature (mA/˚C) VR Topr Tstg Tsol*2 (V) (˚C) (˚C) (˚C) DC Pulse -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 350 350 350 350 350 350 350 350
4 0.40 0.67 50 30 75 LT1U82A Red(Super-luminosity) GaAlAs on GaAIAs 5 0.40 0.67 50 30 66 LT1T82A Red(High-luminosity) GaAlAs on GaAs 5 0.13 0.67 50 10 23 GaP LT1P82A Red 5 0.40 0.67 50 30 85 GaAsP on GaP LT1D82A Red 5 0.40 0.67 50 30 85 LT1S82A Sunset orange GaAsP on GaP 5 0.27 0.67 50 20 50 GaAsP on GaP LT1H82A Yellow 5...
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