(LT1x51A) Chip LED Device
Chip LED Device
LT1t51A series
LT1t51A series
s Outline Dimensions
(Unit : mm)
3.3!2.9mm, 1.1mm Thickness, Colored Di...
Description
Chip LED Device
LT1t51A series
LT1t51A series
s Outline Dimensions
(Unit : mm)
3.3!2.9mm, 1.1mm Thickness, Colored Diffusion Chip LED Devices
s Radiation Diagram
(Ta=25˚C)
3.3
Colored diffusion
-30˚ -40˚ -20˚ -10˚ 0˚ 100 +10˚ +20˚ +30˚ +40˚
2.9 1.9 0.4 0.4
0.4
0.85 0.95
80 -50˚
Relative luminous intensity(%)
2.9
1
2
0.6
+50˚ 60
-60˚
+60˚ 40 +70˚ 20 +80˚
(4-R0.2) 0.9
+0.1 0.16-0.06
-70˚
1.5
0.9
(R0.2)
-80˚
+0.2 1.1-0.1
0.8
-90˚ 0
+90˚
(0.3)
(0.3) (0.3)
(0.3)
Pin connections 1 Anode 2 Cathode Unspecified tolerance:±0.2
T type: Polarity faces in the opposite direction.
s Absolute Maximum Ratings
Model No. Radiation color Radiation material LT1T51A LT1P51A LT1D51A LT1S51A LT1H51A LT1E51A LT1K51A Red(High-luminosity) Red Red Sunset orange Yellow Yellow-green Green GaAlAs on GaAs GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP GaP Power dissipation Forward current Peak forward current P IF IFM (mW) (mA) (mA) 66 23 85 85 50 50 50 30 10 30 30 20 20 20 50 50 50 50 50 50 50
0to0.15 0.3
(Ta=25˚C) Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature (mA/˚C) VR Topr Tstg Tsol*3 (V) (˚C) (˚C) (˚C) DC Pulse 0.40 0.13 0.40 0.40 0.27 0.27 0.27 0.67 0.67 0.67 0.67 0.67 0.67 0.67 5 5 5 5 5 5 5 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +85 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 350 350 350 350 350 350 350
*1 Duty ratio=1/10, Pulse width=0.1ms *...
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