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SW20N50

Part Number	SW20N50
Manufacturer	SAMWIN
Description	N-channel Power MOSFET
Published	Dec 13, 2013
Detailed Description	SAMWIN SW20N50 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (M...
Datasheet	SW20N50 PDF File

Overview

SAMWIN SW20N50 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.
27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P BVDSS : 500V ID : 20A* RDS(ON) : 0.
27ohm 1 2 2 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electro...

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