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SIA417DJ

Vishay

P-Channel 8-V (D-S) MOSFET


Description
New Product SiA417DJ Vishay Siliconix P-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.023 at VGS = - 4.5 V 0.031 at VGS = - 2.5 V -8 0.040 at VGS = - 1.8 V 0.058 at VGS = - 1.5 V 0.095 at VGS = - 1.2 V ID (A) - 12a - 12a - 12 a FEATURES Qg (Typ.) 19 nC - 12a - 12a Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced Power...



Vishay

SIA417DJ

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