SiA413DJ
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () 0.029 at VGS = - 4.5 V - 12 0.034 at VGS = - 2.5 V 0.044 at VGS = - 1.8 V 0.100 at VGS = - 1.5 V ID (A) - 12a - 12a - 12a -3 23 nC Qg (Typ.)
• TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PowerPAK SC-70-6L-Single
APPLICATIONS
1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G S
• Load Switch, PA Switch and Battery Switch for Portable Devices
Marking Code
BFX Part # code XXX Lot Traceability and Date code G
2.05 mm
Ordering Information: SiA413DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA413DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 12 ±8 - 12a - 12a - 10b, c - 8b, c - 40 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V
A
Pulsed Drain Current Continuous Source-Drain Diode Current
Maximum Power Dissipation
PD TJ, Tstg
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Symbol Typical Maximum Unit RthJA t5s 28 36 Maximum Junction-to-Ambientb, f °C/W RthJC 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 70447 S12-1141-Rev. D, 21-May-12 For more information please contact:
[email protected] www.vishay.com 1
Free Datasheet http://www.datasheet4u.com/
Parameter
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA413DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 6.7 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 6.2 A VGS = - 1.8 V, ID = - 2.3 A VGS = - 1.5 V, ID = - 1 A Forward Transconductance Dynamic
b a
Symbol
Test Conditions
Min. - 12
Typ.
Max.
Unit V
- 11 2.7 - 0.4 -1 ± 100 -1 - 10 - 20 0.024 0.028 0.036 0.050 30 0.029 0.034 0.044 0.100
mV/°C V nA µA A
gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb
VDS = - 10 V, ID = - 6.7 A
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
1800 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 6 V, VGS = - 8 V, ID = - 10 A VDS = - 6 V, VGS = - 4.5 V, ID = - 10 A f = 1 MHz VDD = - 6 V, RL = 0.75 ID - 8 A, VGEN = - 4.5 V, Rg = 1 450 390 38 23 3 6.5 7 20 40 65 40 10 VDD = - 6 V, RL = 0.75 ID - 8 A, VGEN = - 8 V, Rg = 1 12 70 40 TC = 25 °C IS = - 8 A, VGS = 0 V - 0.8 40 IF = - 8 A, di/dt = 100 A/µs, TJ = 25 °C 20 14 26 30 60 100 60 15 20 105 60 - 12 40 - 1.2 60 30 ns 57 35 nC pF
A V ns nC ns
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may aff.