Document
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2
HJ6718
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ6718 is designed for general purpose medium power amplifier and switching .
Features
• High power: 1.2W • High current: 1A
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
• Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................... 100 V BVCEO Collector to Emitter Voltage.......................