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HJ6718 Dataheets PDF



Part Number HJ6718
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet HJ6718 DatasheetHJ6718 Datasheet (PDF)

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2 HJ6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ6718 is designed for general purpose medium power amplifier and switching . Features • High power: 1.2W • High current: 1A Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature .. -55 ~ +150 °C Junctio.

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Document
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2 HJ6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ6718 is designed for general purpose medium power amplifier and switching . Features • High power: 1.2W • High current: 1A Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................... 100 V BVCEO Collector to Emitter Voltage.......................


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