HJ6668

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.03.01 Revised Date : 2000.11.01 Page No. : 1/3 HJ6668 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ6668 is designed for general-purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 65 W Maximum Voltages and Currents BVCBO Collector to Base Voltage ..................................................................................... -80 V BVCEO Collector to Emitter Voltage..............................................................................