HJ649A

HI-SINCERITY MICROELECTRONICS CORP. HJ649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ649A is designed for low frequency power amplifier. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.04.03 Page No. : 1/3 Absolute Maximum Ratings (Ta=25°C) TO-252 Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage.................................................................................... -180 V BVCEO Collector to Emitter Voltage................................................................................. -160 V BVE...