Document
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6006-B Issued Date : 1994.11.09 Revised Date : 2000.11.01 Page No. : 1/2
HJ45H11
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ45H11 is designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz;series, shunt and switching regulators; low and high frequency inverters/converters; and many others.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
• Maximum Voltages and Currents BVCEO Collector to Base Volta.