HJ122

HI-SINCERITY MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date :2008.04.09 Page No. : 1/5 Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications. Darlington Schematic C Features High DC current gain Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E Maximum Temperatures Storage Temperature .......................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W Maximum Voltages and Currents (TA=25°C) BVCBO Colle...