Small Signal Transistor
BC846A-G Thru. BC848C-G (NPN)
RoHS Device
Features
-Power dissipation O PCM: 0.20W (@TA=25 C) -...
Small Signal
Transistor
BC846A-G Thru. BC848C-G (
NPN)
RoHS Device
Features
-Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC
SOT-23
0.118(3.00) 0.110(2.80)
3
0.055(1.40) 0.047(1.20)
1
0.079(2.00) 0.071(1.80)
2
Mechanical data
-Case: SOT-23, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Approx. weight: 0.008 grams
0.041(1.05) 0.035(0.90)
0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25)
0.004(0.10) max 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30)
Circuit diagram
-1.BASE -2.EMITTER -3.COLLECTOR
3
Dimensions in inches and (millimeter)
1
2
Maximum Ratings (at Ta=25
Parameter
O
C unless otherwise noted) Symbol BC846-G BC847-G BC848-G BC846-G BC847-G BC848-G Value 80 50 30 65 45 30 6 0.1 200 150 -65 to +150 UNIT
Collector-Base Voltage
VCBO
V
Collector-Emitter Voltage
VCEO
V
Emitter-Base Voltage
VEBO IC PC TJ TSTG
V A mW
°C °C
Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR31
REV:B
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Comchip Technology CO., LTD.
Free Datasheet http://www.datasheet4u.com/
Small Signal
Transistor
Electrical Characteristics
(BC846A-G Thru. BC848C-G, @TA= 25 °C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage...
