DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED...
DATA SHEET
DARLINGTON POWER
TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
The 2SC4351 is a high-speed Darlington power
transistor. This
transistor is ideal for high-precision control such as PWM control for pulse motors or blushless motor of OA and FA equipment.
PACKAGE DRAWING (UNIT: mm)
FEATURES
Mold package that does not require an insulating board or insulation bushing On-chip C to B constant voltage diode for surge voltage absorption On-chip C to E reverse diode Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 60 ± 10 60 ± 10 8.0 ±5.0 ±10 0.5 20 2.0 150 −55 to +150 Unit V V V A A A W W °C °C
Electrode Connection 1. Base 2. Collector 3. Emitter
* PW ≤ 10 ms, duty cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15594EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan
©
2002 1998
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