MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,25V BSB008NE2LX
DataSheet
R...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
OptiMOSTM
OptiMOSTMPower-MOSFET,25V BSB008NE2LX
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
OptiMOSTMPower-MOSFET,25V BSB008NE2LX
1Description
Features
Optimizedfore-fuseandOR-ingapplication UltralowRdsoninCanPAK-MXfootprint Lowprofile(<0.7mm) 100%avalanchetested 100%RgTested Double-sidedcooling CompatiblewithDirectFET®packageMXfootprintandoutline1) QualifiedaccordingtoJEDEC2)fortargetapplications
CanPAKMX-size
Drain Drain
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 25
V
RDS(on),max
0.8
mΩ
ID 180 A
Qoss
74
nC
Qg(0V..10V)
258
nC
Gate
Source
Type/OrderingCode BSB008NE2LX
Package MG-WDSON-2
Marking 04E2
RelatedLinks -
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation. 2) J-...