BSB008NE2LX

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,25V BSB008NE2LX DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,25V BSB008NE2LX 1Description Features Optimizedfore-fuseandOR-ingapplication UltralowRdsoninCanPAK-MXfootprint Lowprofile(<0.7mm) 100%avalanchetested 100%RgTested Double-sidedcooling CompatiblewithDirectFET®packageMXfootprintandoutline1) QualifiedaccordingtoJEDEC2)fortargetapplications CanPAKMX-size Drain Drain Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.8 mΩ ID 180 A Qoss 74 nC Qg(0V..10V) 258 nC Gate Source Type/OrderingCode BSB008NE2LX Package MG-WDSON-2 Marking 04E2 RelatedLinks - 1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation. 2) J-...