BSB013NE2LXI
OptiMOSTM Power-MOSFET
Features • Optimized SyncFET for high performance Buck converter • Integrated monol...
BSB013NE2LXI
OptiMOSTM Power-MOSFET
Features Optimized SyncFET for high performance Buck converter Integrated monolithic
Schottky like diode Low profile (<0.7 mm) 100% avalanche tested 100% R G Tested
Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V)
25 1.3 163 39 62
Double-sided cooling Compatible with DirectFET® package MX footprint and outline 1) Qualified according to JEDEC2) for target applications
CanPAKTM M MG-WDSON-2
Pb-free lead plating; RoHS compliant
V mW A nC nC
Type BSB013NE2LXI
Package MG-WDSON-2
Outline MX
Marking 02E2
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
163 A
V GS=10 V, T C=100 °C
103
V GS=10 V, T A=25 °C, R thJA=45 K/W3)
36
Pulsed drain current4) Avalanche current, single pulse5)
I D,pulse I AS
T C=25 °C T C=25 °C
400 40
Avalanche energy, single pulse Gate source voltage
E AS V GS
I D=4...
