Document
STH12NA60/FI STW12NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STH12NA60 STH12NA60FI STW12NA60
s s s s s s s
V DSS 600 V 600 V 600 V
R DS( on) < 0.6 Ω < 0.6 Ω < 0.6 Ω
ID 12 A 7A 12 A
TO-247
TYPICAL RDS(on) = 0.44 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-218
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3 2 1
3
3 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
2
ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STH/STW12NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH12NA60FI V V V 7 4.4 48 80 0.64 4000 A A A W W/o C V
o o
600 600 ± 30 12 7.6 48 190 1.52 -65 to 150 150
C C
(•) Pulse width limited by safe operating area
November 1996
1/11
STH12NA60/FI - STW12NA60
THERMAL DATA
TO-218/TO-247 ISOWATT218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 0.66 30 0.1 300 1.56
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%)
o
Max Value 12 700 28 7.6
Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VG S = 0 Min. 600 25 250 ± 100 Typ. Max. Unit V µA µA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 30 V
T c = 125 oC
ON (∗ )
Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 µ A ID = 6 A 12 Min. 2.25 Typ. 3 0.44 Max. 3.75 0.6 Unit V Ω A
V DS > ID( on) x RD S(on) max.