Document
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
150 V 53 mW 21 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen Free • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G
IPP530N15N3 G
Package Marking
PG-TO263-3 530N15N
PG-TO252-3 530N15N
PG-TO262-3 530N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO220-3 530N15N
Value
Unit
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=18 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
21
A
15
84
60
mJ
±20
V
68
W
-55 ... 175
°C
55/175/56
Rev. 2.6
page 1
2013-07-09
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction ambient
R thJA minimal footprint
-
6 cm2 cooling area3)
-
-
2.2 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
150
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=35 µA
2
3
Zero gate voltage drain current
I DSS
V DS=120 V, V GS=0 V, T j=25 °C
-
0.1
-V 4
1 µA
Gate-source leakage current
V DS=120 V, V GS=0 V, T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
10
100
1
100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=18 A
-
44
53 mW
Gate resistance Transconductance
V GS=8 V, I D=9 A
-
44
53
RG
-
2.1
-W
g fs
|V DS|>2|I D|R DS(on)max, I D=18 A
11
21
-S
1)J-STD20 and JESD22
2) See figure 3 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 2.6
page 2
2013-07-09
Parameter
Symbol Conditions
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss
-
C oss
V GS=0 V, V DS=75 V, f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=75 V, V GS=10 V,
-
t d(off)
I D=18 A, R G,ext=1.6 W
-
tf
-
667
887 pF
80
106
3.4
-
9
- ns
9
-
13
-
3
-
Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Q gs
-
3.8
- nC
Q gd
-
1.5
-
Q sw
V DD=75 V, I D=18 A, V GS=0 to 10 V
-
3.3
-
Qg
-
8.7
12
V plateau
-
5.7
-V
Q oss
V DD=75 V, V GS=0 V
-
22
29 nC
Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time Reverse recovery charge
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=21 A, T j=25 °C
t rr
V R=75 V, I F=18A ,
Q rr
di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
-
-
21 A
-
-
84
-
1
1.2 V
-
80
- ns
-
229
- nC
Rev. 2.6
page 3
2013-07-09
1 Power dissipation P tot=f(T C)
80
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
2 Drain current I D=f(T C); V GS≥10 V
25
Ptot [W] ID [A]
20 60
15 40
10
20 5
0
0
50
100
150
200
TC [°C]
0
0
50
100
150
200
TC [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
102
1 µs 10 µs
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
ID [A] ZthJC [K/W]
100 µs 0.5
101
1 ms
100
0.2
0.1
10 ms
0.05
DC
100
10-1
0.02
0.01 single pulse
10-1 10-1
Rev. 2.6
100
101
102
VDS [V]
10-2
103
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2013-07-09
ID [A] RDS(on) [mW]
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
60
40
10 V 8V 7V
6.5 V
6V
20
5.5 V
5V
4.5 V
0
0
1
2
3
4
VDS [V]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
50
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
100
5V
80
5.5 V
6V
60
7V
8V
40
10 V
20
0
5
0
5
10
15
20
25
ID [A]
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
40
ID [A] gfs [S]
40 30 20 10
0 0
Rev. 2.6
175 °C
25 °C
2
4
6
VGS [V]
30
20
10
0
8
0
page 5
10
20
30
40
50
ID [A]
2013-07-09
9 Drain-source on-state resistance R DS(on)=f(T j); I D=18 A; V GS=10 V
160
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530.