DatasheetsPDF.com

IPI530N15N3G Dataheets PDF



Part Number IPI530N15N3G
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet IPI530N15N3G DatasheetIPI530N15N3G Datasheet (PDF)

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 53 mW 21 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen Free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC6.

  IPI530N15N3G   IPI530N15N3G


Document
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 53 mW 21 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen Free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Package Marking PG-TO263-3 530N15N PG-TO252-3 530N15N PG-TO262-3 530N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 530N15N Value Unit Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=18 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 21 A 15 84 60 mJ ±20 V 68 W -55 ... 175 °C 55/175/56 Rev. 2.6 page 1 2013-07-09 IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient R thJA minimal footprint - 6 cm2 cooling area3) - - 2.2 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 150 - Gate threshold voltage V GS(th) V DS=V GS, I D=35 µA 2 3 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.1 -V 4 1 µA Gate-source leakage current V DS=120 V, V GS=0 V, T j=125 °C - I GSS V GS=20 V, V DS=0 V - 10 100 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A - 44 53 mW Gate resistance Transconductance V GS=8 V, I D=9 A - 44 53 RG - 2.1 -W g fs |V DS|>2|I D|R DS(on)max, I D=18 A 11 21 -S 1)J-STD20 and JESD22 2) See figure 3 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.6 page 2 2013-07-09 Parameter Symbol Conditions IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss - C oss V GS=0 V, V DS=75 V, f =1 MHz - C rss - t d(on) - tr V DD=75 V, V GS=10 V, - t d(off) I D=18 A, R G,ext=1.6 W - tf - 667 887 pF 80 106 3.4 - 9 - ns 9 - 13 - 3 - Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Q gs - 3.8 - nC Q gd - 1.5 - Q sw V DD=75 V, I D=18 A, V GS=0 to 10 V - 3.3 - Qg - 8.7 12 V plateau - 5.7 -V Q oss V DD=75 V, V GS=0 V - 22 29 nC Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse T C=25 °C V SD V GS=0 V, I F=21 A, T j=25 °C t rr V R=75 V, I F=18A , Q rr di F/dt =100 A/µs 5) See figure 16 for gate charge parameter definition - - 21 A - - 84 - 1 1.2 V - 80 - ns - 229 - nC Rev. 2.6 page 3 2013-07-09 1 Power dissipation P tot=f(T C) 80 IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G 2 Drain current I D=f(T C); V GS≥10 V 25 Ptot [W] ID [A] 20 60 15 40 10 20 5 0 0 50 100 150 200 TC [°C] 0 0 50 100 150 200 TC [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 1 µs 10 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 ID [A] ZthJC [K/W] 100 µs 0.5 101 1 ms 100 0.2 0.1 10 ms 0.05 DC 100 10-1 0.02 0.01 single pulse 10-1 10-1 Rev. 2.6 100 101 102 VDS [V] 10-2 103 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-07-09 ID [A] RDS(on) [mW] 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 60 40 10 V 8V 7V 6.5 V 6V 20 5.5 V 5V 4.5 V 0 0 1 2 3 4 VDS [V] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 50 IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 100 5V 80 5.5 V 6V 60 7V 8V 40 10 V 20 0 5 0 5 10 15 20 25 ID [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 40 ID [A] gfs [S] 40 30 20 10 0 0 Rev. 2.6 175 °C 25 °C 2 4 6 VGS [V] 30 20 10 0 8 0 page 5 10 20 30 40 50 ID [A] 2013-07-09 9 Drain-source on-state resistance R DS(on)=f(T j); I D=18 A; V GS=10 V 160 IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530.


IPD530N15N3G IPI530N15N3G IPP530N15N3G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)