AP9924GO

AP9924GO RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ RoHS Compliant D S2 S2 G2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G1 S1 S1 20V 20mΩ 6.8A TSSOP-8 D ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D D G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 +8 6.8 5.4 20 1.38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 2009002021 Free Datasheet http://www.datasheet4u.com/ AP9924GO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=6A VGS=2.5V, ID=4A Min. 20 0.25 - Typ. 19 9 1 4.5 8 10 16 7 400 120 110 Max. Units 20 30 1 10 +100 14.4 640 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Thresho...