MDP5N50F

MDP5N50F / MDF5N50F N-channel MOSFET 500V MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55Ω General Description The MDP5N50F/MDF5N50F use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP5N50F/MDF5N50F are suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 4.5A RDS(ON) ≤ 1.55Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast D G TO-220 MDP Series TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt (3) (1) Symbol VDSS VGSS TC=25 C TC=100 C o o MDP5N50F 500 ±30 4.5 2.8 18 93 0.74 93 4.5 230 MDF5N50F Unit V V ID IDM 4.5* 2.8* 18* 27 0.22 A A A W W/ oC mJ V/ns mJ o TC=25oC Derate above 25 oC PD EAR dv/dt EAS TJ, Tstg Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature -55~150 C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) (1) Symbol RθJA RθJC MDP5N50F 62.5 1.35 MDF5N50F 62.5 4.6 Unit o C/W July. 2010 Version 1.1 1 MagnaChip Semiconductor Ltd. Free Datasheet http://www.datasheet4u.com/ MDP5N50F / MDF5N50F N-channel MOSFET 500V Ordering Information Part Number MDP5N50FTH MDF5N50FTH Temp. Range -...