21N50C3

SPB21N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.19 21 PG-TO263 V Ω A Type SPB21N50C3 Package PG-TO263 Ordering Code Q67040-S4566 Marking 21N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPB ID 21 13.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt 63 690 1 21 ±20 ±30 208 Value Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=10A, VDD=50V A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=21A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) A V W °C V/ns 2005-11-07 Free Datasheet http://www.datasheet4u.com/ -55...+150 15 Rev. 2.3 Page 1 SPB21N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 21 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, reflow soldering, MSL1 1.6 mm (0.063 in.) from case for 10...