2SC2555

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2555 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 400V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 4A ; VCE= 5V 2SC2555 MIN TYP. MAX UNIT 400 V 500 ...