XPT IGBT
IXA40RG1200DHGLB
tentative
XPT IGBT
VCES I C25
= =
1200 V 61 A 1.8 V
VCE(sat) =
ISOPLUS™ Surface Mount Power Devic...
Description
IXA40RG1200DHGLB
tentative
XPT IGBT
VCES I C25
= =
1200 V 61 A 1.8 V
VCE(sat) =
ISOPLUS™ Surface Mount Power Device Boost Topology XPT IGBT
Part number
IXA40RG1200DHGLB
7 BD VDD 1 FWD 9
Backside: isolated
3 2 8
Features / Advantages:
● XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits ● Sonic™ diode - fast reverse recovery - low operating forward voltage - low leakage current - low temperature dependency of reverse recovery ● Vcesat detection diode (VDD) - integrated into package - very fast diode
Applications:
● AC drives - brake chopper ● PFC - boost chopper ● Switched reluctance drives
Package: SMPD
● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling ● Isolation Voltage: 3000 V~
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20120618
© 2012 IXYS all rights reserved
Free Datasheet http://www.datasheet4u.com/
IXA40RG1200DHGLB
tentative Free Wheeling Diode FWD
Symbol VRSM VRRM IR VF Definition
max. repetitive reverse blocking voltage reverse current, drain current
Ratings Conditions TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C T VJ = 150 °C d = 0.5 TVJ = 150 °C 1.26 28 1 0.30 TC = 25°C t = 10 ms; (50...
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