IXA40RG1200DHGLB

IXA40RG1200DHGLB tentative XPT IGBT VCES I C25 = = 1200 V 61 A 1.8 V VCE(sat) = ISOPLUS™ Surface Mount Power Device Boost Topology XPT IGBT Part number IXA40RG1200DHGLB 7 BD VDD 1 FWD 9 Backside: isolated 3 2 8 Features / Advantages: ● XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits ● Sonic™ diode - fast reverse recovery - low operating forward voltage - low leakage current - low temperature dependency of reverse recovery ● Vcesat detection diode (VDD) - integrated into package - very fast diode Applications: ● AC drives - brake chopper ● PFC - boost chopper ● Switched reluctance drives Package: SMPD ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling ● Isolation Voltage: 3000 V~ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120618 © 2012 IXYS all rights reserved Free Datasheet http://www.datasheet4u.com/ IXA40RG1200DHGLB tentative Free Wheeling Diode FWD Symbol VRSM VRRM IR VF Definition max. repetitive reverse blocking voltage reverse current, drain current Ratings Conditions TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C T VJ = 150 °C d = 0.5 TVJ = 150 °C 1.26 28 1 0.30 TC = 25°C t = 10 ms; (50...