SMD Type
Silicon NPN Epitaxial 2SD1918
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High breakdo...
SMD Type
Silicon
NPN Epitaxial 2SD1918
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High breakdown voltage.(BVCEO = 160V) Low collector output capacitance.Typ. 20pF at VCB = 10V
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
High transition frequency.(fT = 80MHZ)
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation TC = 25 Junction temperature Storage temperature * Pw=200msec duty=1/2 Tj Tstg Symbol VCBO VCEO VEBO IC Rating 160 160 5 1.5 3 PC 1 10 150 -55 to +150 Unit V V V A(DC) A(Pulse) * W W
Electrical Characteristics Ta = 25
Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage * Base to emitter voltage * DC current transfer ratio Transition frequency Output capacitance * Measured using pulse current. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob IC = 50ìA IC = 1mA IE = 50ìA VCB = 120V VEB = 4V IC/IB = 1A/0.1A IC/IB = 1A/0.1A VCE/IC = 5V/0.1A VCE = 5V , IE = -0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz 120 80 20 Testconditons Min 160 160 5 1 1 2 1.5 390 MHz pF Typ Max Unit V V V ìA ì...
