KPA2790GR

SMD Type MOS Field Effect Transistor KPA2790GR Features Low on-state resistance N-channel RDS(on)1 = 28 m RDS(on)2 = 40 m P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. Built-in gate protection diode Small and surface mount package MAX. (VGS = 10 V, ID = 3 A) MAX. (VGS = 4.5 V, ID = 3 A) MAX. (VGS = -10 V, ID = -3 A) MAX. (VGS = -4.5 V, ID = -3 A) IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) *1 Total Power Dissipation (1 unit) *2 Total Power Dissipation (2 units) *2 Channel Temperature Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3 *1 PW 10 s, Duty Cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS 6 3.6 N-Channel 30 20 6 24 1.7 2 150 -55 to +150 -6 3.6 A mJ P- Channel -30 20 6 24 Unit V V A A W W *2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm *3 Starting Tch = 25 , VDD =1/2 X VDSS, RG = 25 , L = 100 H, VGS = VGSS 0V www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.co SMD Type KPA2790GR Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Drain to Source On-state Resistance RDS(on)3 RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on ...