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KPA1764 Dataheets PDF



Part Number KPA1764
Manufacturers Kexin
Logo Kexin
Description MOS Field Effect Transistor
Datasheet KPA1764 DatasheetKPA1764 Datasheet (PDF)

SMD Type MOS Field Effect Transistor KPA1764 IC IC Features Dual chip type Low on-state resistance RDS(on)1 = 27 m RDS(on)2 = 32 m RDS(on)3 = 34 m TYP. (VGS = 10 V, ID = 3.5 A) TYP. (VGS = 4.5 V, ID = 3.5 A) TYP. (VGS = 4.0 V, ID = 3.5 A) 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 Low input capacitance Ciss = 1300 pF TYP. Built-in G-S protection diode Small and surface mount package 5, 6 : Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = .

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SMD Type MOS Field Effect Transistor KPA1764 IC IC Features Dual chip type Low on-state resistance RDS(on)1 = 27 m RDS(on)2 = 32 m RDS(on)3 = 34 m TYP. (VGS = 10 V, ID = 3.5 A) TYP. (VGS = 4.5 V, ID = 3.5 A) TYP. (VGS = 4.0 V, ID = 3.5 A) 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 Low input capacitance Ciss = 1300 pF TYP. Built-in G-S protection diode Small and surface mount package 5, 6 : Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) *1 Total Power Dissipation (1 unit) *2 Total Power Dissipation (2 unit) *2 Channel Temperature Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3 *1 PW 10 s, Duty cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS Rating 60 20 7 28 1.7 2.0 150 -55 to + 150 7 98 A mJ Unit V V A A W W *2 Mounted on ceramic substrate of 2000 mm2 X1.1 mm *3 Starting Tch = 25 , VDD = 30 V, RG = 25 , VGS = 20 0V www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type KPA1764 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 Drain to Source On-state Resistance RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 7.0 A, VGS = 0 IF = 7.0 A, VGS = 0 V di/dt = 100 A/ s ID = 7.0A, VDD = 48V, VGS = 10 V ID = 3.5 A, VGS = 10 V, VDD =30 V,RG = 10 VDS = 10 V, VGS = 0, f = 1 MHz Testconditons VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 1.5 5.0 2.0 9 27 32 34 1300 230 110 15 69 65 27 29 3.6 7.4 0.84 40 66 35 42 46 Min Typ Max 10 10 2.5 Unit A A V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC IC IC VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 10 V, ID = 3.5 A VGS = 4.5V, ID = 3.5 A VGS = 4.0 V, ID = 3.5 A 2 www.kexin.com.cn Free Datasheet http://www.datasheet4u.com/ .


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