KPA1816

SMD Type MOS Field Effect Transistor KPA1816 IC IC Features 1.8V drive available Low on-state resistance RDS(on)1 = 15 m RDS(on)2 = 16 m RDS(on)3 = 22.5 m RDS(on)4 = 41.5 m TYP. (VGS = -4.5 V, ID = -4.5 A) TYP. (VGS = -4.0 V, ID = -4.5 A) TYP. (VGS = -2.5 V, ID = -4.5 A) TYP. (VGS = -1.8 V, ID = -2.5 A) TSSOP-8 Unit: mm 1, 2, 3 : Source 4: Gate Built-in G-S protection diode against ESD 5, 6, 7, 8: Drain Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Ta = 25 Drain Current (Pulse) *1 Total Power Dissipation(2 unit) *2 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Rating -12 8.0 9.0 36 2.0 150 -55 to + 150 Unit V V A A W *2 Mounted on ceramic substrate of 5000mm2 X1.1 mm www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type KPA1816 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 Drain to Source On-state Resistance RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 9.0 A...