AOD3C60

AOD3C60 600V,3A N-Channel MOSFET General Description The AOD3C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700 19A < 1.4Ω 10.3nC 2µC 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View Bottom View D D D S S G AOD3C60 G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Maximum 600 ±30 3 2.5 19 6 18 218 100 20 89 0.7 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ oC ° C ° C Symbol RθJA RθCS RθJC Typical 45 1.1 Maximum 55 0.5 1.4 Units ° C/W ° C/W ° C/W Rev.1.0 April 2013 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datashe...