AOD2810

AOD2810 80V N-Channel MOSFET General Description The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 46A < 8.5mΩ < 12mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D Bottom View D S G S G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C C Maximum 80 ±20 46 36 160 10.5 8.5 35 61 100 50 2.5 1.6 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.1mH TC=25° C Power Dissipation Power Dissipation B TC=100° C TA=25° C TA=70° C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 41 1.15 Max 20 50 1.5 Units ° C/W ° C/W ° C/W Rev 0: Dec. 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD2810 ...