AOD200

AOD200 30V N-Channel MOSFET General Description The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 36A < 7.8mΩ < 11mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D D Bottom View S G S G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Maximum 30 Units V ±20 V Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C TC=25° C TC=100° C C TA=25° TA=70° C C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG 36 28 120 14 11 28 39 50 25 2.5 1.6 -55 to 175 A A mJ W W ° C A Avalanche energy L=0.1mH C TC=25° Power Dissipation Power Dissipation B TC=100° C C TA=25° TA=70° C A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2.1 Max 20 50 3 Units ° C/W ° C/W ° C/W Rev 0: November 2010 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD200 Electrical Characteristics (TJ=25° C unless otherwise noted) Sy...