AOD2210

AOD2210/AOI2210 200V N-Channel MOSFET General Description Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=5V) 200V 18A < 105mΩ < 120mΩ Applications Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO-252 TO251A DPAK IPAK D Top View Bottom View Top View Bottom View D D D D S G Orderable Part Number AOD2210 AOI2210 G S S D G Package Type TO-252 TO-251A G D S Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 200 ±20 18 13 45 3.0 2.5 9 4 240 100 50 2.5 1.6 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 41 Maximum Junction-to-Case Steady-State RθJC 1 Max 20 50 1.5 Units °C/W °C/W °C/W Rev.1.0: August 2014 www.aosmd.com P...