AOU2N60

AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 700V@150℃ 2A < 4.4Ω Top View TO252 DPAK Bottom View TO251 Top View Bottom View D D D S G G S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy H Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL S DG G Maximum 600 ±30 2 1.4 8 2 60 120 5 56.8 0.45 -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 45 1.8 Maximum 55 0.5 2.2 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev 6.0: March 2016 www.aosmd.com Page 1 of...