AOD2606

AOD2606/AOI2606 60V N-Channel MOSFET General Description Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 60V 46A < 6.8mΩ Applications Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO-252 TO-251A DPAK IPAK D Top View Bottom View Top View Bottom View D D D D S G Orderable Part Number AOD2606 AOI2606 G S S D G Package Type TO-252 TO-251A G D S Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 46 36 184 14 11 60 180 72 150 75 2.5 1.6 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 16 41 Maximum Junction-to-Case Steady-State RθJC 0.8 Max 20 50 1.0 Units °C/W °C/W °C/W Rev.1.0: December 2014 www.aosmd.com Page 1 of 6 Electrical ...