MMDL770T1

MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance – 1.0 pF @ 20 V Low Reverse Leakage – 200 nA (max) High Reverse Voltage – 70 Volts (min) Available in 8 mm Tape and Reel Device Marking: 5H http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Symbol VR Reverse Voltage Rating Value 70 Unit Vdc 1 2 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635 –55 to +150 Unit mW mW/°C °C/W °C PLASTIC SOD–323 CASE 477 RqJA TJ, Tstg *FR–5 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device MMDL770T1 Package SOD–323 Shipping 3000 / Tape & Reel © Semiconductor Components Industries, LLC, 2001 1 January, 2000 – Rev. 0 Publication Order Number: MMDL770T1/D Free Datasheet http://www.datasheet4u.com/ MMDL770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 20 Volts, f = 1.0 MHZ) Reverse Leakage (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) Symbol V(BR)R 70 CT – IR – VF – 0.7 1.0 9.0 200 Vdc 0.5 1.0 nAdc – – pF Min Typ Max Unit Volts TYPICAL CHARACTERISTICS 2.0 CT, TOTAL CAP...