AO4409

AO4409 30V P-Channel MOSFET General Description Product Summary The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested -30V -15A < 7.5mΩ < 12mΩ Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum -30 ±20 -15 -12.8 -80 30 135 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev.8.0: July 2013 www.aosmd.com Page 1 of 5 AO4409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Thresho...