AO4404B

AO4404B 30V N-Channel MOSFET General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC -DC conversion. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 8.5A < 24mΩ < 30mΩ < 48mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B C TA=70° Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C C TA=70° VGS ID IDM IAS, IAR EAS, EAR PD TJ, TSTG Maximum 30 ±12 8.5 7.1 60 14 10 3.1 2 -55 to 150 Units V V A A mJ W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W 1/6 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ AO4404B 30V N-Channel MOSFET Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=8.5A RDS(ON) Static Drain-Source On-Resistance C TJ=125° VGS=4.5V, ID=8.5A VGS=2.5V, ID=5A gFS VSD IS Forward Transconductance Diode Forw...