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AO4402 Dataheets PDF



Part Number AO4402
Manufacturers Freescale
Logo Freescale
Description N-Channel MOSFET
Datasheet AO4402 DatasheetAO4402 Datasheet (PDF)

AO4402 20V N-Channel MOSFET General Description The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 20A < 5.5mΩ < 7mΩ SOIC-8 D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current P.

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AO4402 20V N-Channel MOSFET General Description The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 20A < 5.5mΩ < 7mΩ SOIC-8 D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead C Maximum 20 ±12 20 16 140 57 162 3.1 2 -55 to 150 Units V V A A mJ W ° C VGS TA=25° C C TA=70° ID IDM IAS, IAR EAS, EAR PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W 1/6 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ AO4402 20V N-Channel MOSFET Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=4.5V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=2.5V, ID=18A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V C TJ=125° 0.5 140 4.6 5.8 5.5 105 0.6 1 4 3080 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 520 350 0.6 28 VGS=10V, VDS=10V, ID=20A 7 7 VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 13 29 3860 740 580 1.4 36 9 12 7 8 70 18 17 36 20 43 4630 960 810 2.1 43 11 17 5.5 7 7 1 Min 20 1 5 100 1.6 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150° C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep C.Maximum avalanche current limited by tester capability. initialTJ=25° D.


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