AO4406

AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4406 and AO4406L are electrically identical. -RoHS Compliant -AO4406L is Halogen Free Features VDS (V) = 30V ID = 11.5A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Avalanche Current B Repetitive Avalanche Energy L=0.3mH TA=25° C Power Dissipation TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF A Maximum Junction-to-Ambient Maximum Junction-to-Lead C B B Maximum 30 ±12 11.5 9.6 80 25 94 3 2.1 -55 to 150 Units V V A A mJ W ° C VGS C TA=25° TA=70° C ID IDM IAV EAV PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 23 48 12 Max 40 65 16 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AO4406 Electrical Characteristics (TJ=25° C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS...