MPSA42

MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSA43 MPSA42 VCEO 200 300 Vdc Collector −Base Voltage MPSA43 MPSA42 VCBO 200 300 Vdc Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 6.0 Vdc 500 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommende...