SAMWIN
SW19N10
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Im...
SAMWIN
SW19N10
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220
TO-252
BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm
1 1 2 3
2 3 2
1. Gate 2. Drain 3. Source
1
General Description This N-channel enhancement mode field-effect power
transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.
3
Order Codes
Item 1 2 Sales Type SW P 19N10 SW D 19N10 Marking SW19N10 SW19N10 Package TO-220 TO-252 Packaging TUBE REEL
Absolute maximum ratings
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25oC =25oC) (note 2) (note 1) (note 3) (@TC=100oC) (note 1) Parameter Value 100 17 11 68 ± 25 215 7.5 6.0 62.5 0.5 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC
oC oC
Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal characteristics
Symbol Rthjc Rthcs Rthja
Mar. 2011. Rev. 2.0
Parameter Min. Thermal resistance...