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SW12N60
N-channel MOSFET
Description
SAMWIN SW12N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.7 Ω)@VGS=10V ■ Gate Charge (Typ 58nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID 1 2 1 3 2 : 12.0A RDS(ON) : 0.7ohm 3 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMW...
SAMWIN
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