DMN66D0LW

DMN66D0LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM) Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data SOT-323 NEW PRODUCT Case: SOT-323 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) Drain D Gate ESD PROTECTED, 1KV TOP VIEW Gate Protection Diode Source G TOP VIEW S EQUIVALENT CIRCUIT Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID Value 60 ±20 115 73 800 Units V V mA Characteristic Drain-Source Voltage Gate-Source Voltage (Note 1) Drain Current (Note 1) Continuous Continuous Continuous @ 100°C Pulsed Thermal Characteristics @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS...