DMN66D0LDW

Product Summary BVDSS 60V RDS(on) Max 6Ω @ VGS = 5V 5Ω @ VGS = 10V ID TA = +25°C 90mA 115mA Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Load Switches DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Qsuffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An Automotive-Compliant Part is Available Under Separate Datasheet (DMN66D0LDWQ) Mechanical Data Case: SOT363 (Standard) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Pla...