Document
AP2344GEN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free
SOT-23 D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
S G
20V 23mΩ 6.2A
Description
AP2344 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
D G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current
1 3 3
Rating 20 +8 6.2 5 20 1.38 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 90
Unit ℃/W 1 201209241
Data and specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP2344GEN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=6A VGS=2.5V, ID=4A VGS=1.8V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=250uA VDS=5V, ID=6A VDS=16V, VGS=0V VGS=+8V, VDS=0V ID=6A VDS=10V VGS=4.5V VDS=10V ID=1A RG=3.3Ω VGS=5V VGS=0V VDS=10V f=1.0MHz f=1.0MHz Min. 20 0.3 Typ. 18.4 20.7 25.3 0.5 24 15 1.5 4 5 21 28 19 130 115 1.5 Max. Units 23 27 36 1 10 +30 24 3 V mΩ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Ω
1060 1700
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=1.2A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 11 4
Max. Units 1.2 V ns nC
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10sec ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATIO.