P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP2323GN-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of...
Description
Advanced Power Electronics Corp.
AP2323GN-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free
D
SOT-23 G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness.
The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
BVDSS RDS(ON) ID
G
-20V 38mΩ
-5A D
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃
ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-20 +8 -5
-4 -20 1.38 -55 to 150 -55 to 150
V V A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-amb
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 90
Unit ℃/W
1 201409042
AP2323GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Tr...
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