CMLT2222AG
SURFACE MOUNT SILICON DUAL NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMI...
CMLT2222AG
SURFACE MOUNT SILICON DUAL
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222AG consists of two (2) isolated 2222A
NPN silicon
transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. These devices have been designed for small signal general purpose and switching applications.
SOT-563 CASE
Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance
MARKING CODE: 2CG
SYMBOL
VCBO VCEO VEBO
IC PD PD PD TJ, Tstg ΘJA
75 40 6.0 600 350 300 150 -65 to +150 357
UNITS V V V mA
mW mW mW OC OC/W
ELECTRICAL CHARACTERISTICS PER
TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO ICBO ICEV IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE
VCB=60V VCB=60V, TA=125 °C VCE=60V, VEB=3.0V VEB=3.0V IC=10μA IC=10mA IE=10μA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=1.0V, IC=150mA VCE=10V, IC=150mA VCE=10V, IC=500mA
75 40 6.0
0.6
35 50 75 50 100 40
10 10 10 10
0.3 1.0 1.2 2.0
300
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board...