2SA2142

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 2SA2142 High-Voltage Switching Applications Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation DC Pulse Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC ICP IB Pc −600 V −600 V −7 V −0.5 A −1 −0.25 A 1 W 15 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2004-03 1 2013-11-01 2SA2142 Electrical Characteristics (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturatio...