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2SA2121 Dataheets PDF



Part Number 2SA2121
Manufacturers Toshiba
Logo Toshiba
Description Silicon PNP Transistor
Datasheet 2SA2121 Datasheet2SA2121 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 2SA2121 Power Amplifier Applications Unit: mm z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −200 V Collector-emitter voltage VCEO −200 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.5 A Collector power dissipation(TC=25℃) PC 220 W Junct.

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 2SA2121 Power Amplifier Applications Unit: mm z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −200 V Collector-emitter voltage VCEO −200 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.5 A Collector power dissipation(TC=25℃) PC 220 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-21F1A Weight: 9.75 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2005-03 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = −200 V, IE = 0 IEBO VEB = −5 V, IC = 0 V (BR) CEO IC = −50 mA, IB = 0 hFE (1) VCE = −5 V, IC = −1 A (Note 1) hFE (2) VCE (sat) VBE fT Cob VCE = −5 V, IC = −8 A IC = −10 A, IB = −1 A VCE = −5 V, IC = −8 A VCE = −5 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz Note 1: hFE(1) classification R: 55 to 110, O: 80 to 160 Marking 2SA2121 Min Typ. Max Unit ― ― −5.0 μA ― ― −5.0 μA −200 ― ― V 55 ― 160 35 60 ― ― −1.5 −3.0 V ― −1.0 −1.5 V ― 25 ― MHz ― 470 ― pF TOSHIBA 2SA2121 JAPAN Characteristics indicator Part No. (or abbreviation code) Lot No. Note 2 Note2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 Collector current IC (A) −20 Common emitter Tc = 25°C IC – VCE −16 −500 −400 −12 −300 −200 −8 −100 −50 −4 IB = −20 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector current IC (A) 2SA2121 IC– VBE −16 −12 Tc = 100°C 25 −8 −25 −4 Common emitter VCE .


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