2SA2121

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 2SA2121 Power Amplifier Applications Unit: mm z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −200 V Collector-emitter voltage VCEO −200 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.5 A Collector power dissipation（TC=25℃） PC 220 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-21F1A Weight: 9.75 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2005-03 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitte...